{"created":"2023-07-25T10:24:11.350963+00:00","id":1493,"links":{},"metadata":{"_buckets":{"deposit":"9d17be97-4bee-40d8-b65b-d0814b1c6ac2"},"_deposit":{"created_by":1,"id":"1493","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"1493"},"status":"published"},"_oai":{"id":"oai:hiroshima-cu.repo.nii.ac.jp:00001493","sets":["52:303:304"]},"author_link":["5613","5611","5612","5610"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-10","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"103","bibliographicVolumeNumber":"58","bibliographic_titles":[{"bibliographic_title":"電気・情報関連学会中国支部連合大会講演論文集"}]}]},"item_10003_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"MOSFETの製造プロセスは微細化が進み、MOSFETの特性ばらつきが回路動作に与える影響が大きくなっている。そのため、個々のMOSFETの特性を測定し、そのばらつきを求めるDMA(device Matrix Array)と呼ばれる試験回路が考案されている。本論文では、これらの試験回路が寄生抵抗によって受ける影響をシミュレーションによって調べた。","subitem_description_type":"Abstract"}]},"item_10003_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"電気・情報関連学会中国支部"}]},"item_10003_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上田, 浩一郎"},{"creatorName":"ウエダ, コウイチロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"5610","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"寺田, 和夫"},{"creatorName":"テラダ, カズオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"5611","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"UEDA, Koichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"5612","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"TERADA, Kazuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"5613","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-03-02"}],"displaytype":"detail","filename":"p103_0402-7.pdf","filesize":[{"value":"184.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"p103_0402-7.pdf","url":"https://hiroshima-cu.repo.nii.ac.jp/record/1493/files/p103_0402-7.pdf"},"version_id":"52222df7-e96a-4a8a-90f1-23eb634719cd"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"MOSFET","subitem_subject_scheme":"Other"},{"subitem_subject":"寄生抵抗","subitem_subject_scheme":"Other"},{"subitem_subject":"特性ばらつき","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"MOSFETドレイン電流ばらつきに対する寄生抵抗の影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"MOSFETドレイン電流ばらつきに対する寄生抵抗の影響"}]},"item_type_id":"10003","owner":"1","path":["304"],"pubdate":{"attribute_name":"公開日","attribute_value":"2023-03-02"},"publish_date":"2023-03-02","publish_status":"0","recid":"1493","relation_version_is_last":true,"title":["MOSFETドレイン電流ばらつきに対する寄生抵抗の影響"],"weko_creator_id":"1","weko_shared_id":1},"updated":"2023-07-25T10:35:19.809053+00:00"}