{"created":"2023-07-25T10:23:53.576499+00:00","id":1194,"links":{},"metadata":{"_buckets":{"deposit":"30e23bce-e307-4967-a45e-d392985ee924"},"_deposit":{"created_by":1,"id":"1194","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"1194"},"status":"published"},"_oai":{"id":"oai:hiroshima-cu.repo.nii.ac.jp:00001194","sets":["1:196"]},"author_link":["3730","3727","3728","3729"],"item_10001_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996-03-11","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageStart":"134","bibliographicVolumeNumber":"1996年.エレクトロニクス","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会総合大会講演論文集"}]}]},"item_10001_description_19":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"MOSLSIの高集積化が進むに従い、MOSFET特性の標準偏差を簡単に評価する方法が重要になっている。本研究では、同一構造MOSFETを並列接続したものを1つのMOSFETのように取り扱うことによって、簡単にしきい値電圧の標準偏差を測定する方法を提案し、その実現可能性を調べる。","subitem_description_type":"Abstract"}]},"item_10001_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"電子情報通信学会"}]},"item_10001_relation_12":{"attribute_name":"論文ID（NAID）","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"110003245388","subitem_relation_type_select":"NAID"}}]},"item_10001_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"CiNii Research"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110003245388","subitem_relation_type_select":"URI"}}]},"item_10001_rights_15":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"copyright©1996 IEICE"},{"subitem_rights":"本文データは学協会の許諾に基づきCiNiiから複製したものである。"}]},"item_10001_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AN10471452","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"寺田, 和夫"},{"creatorName":"テラダ, カズオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3727","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"最上, 徹"},{"creatorName":"モガミ, トオル","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3728","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"TERADA, Kazuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3729","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"MOGAMI, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3730","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-02-28"}],"displaytype":"detail","filename":"110003245388.pdf","filesize":[{"value":"92.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110003245388.pdf","url":"https://hiroshima-cu.repo.nii.ac.jp/record/1194/files/110003245388.pdf"},"version_id":"90bb10be-7607-4fef-81cd-a90aac171e53"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"並列接続MOSFETを用いたしきい値電圧標準偏差の測定評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"並列接続MOSFETを用いたしきい値電圧標準偏差の測定評価"},{"subitem_title":"Measurement of Standard Deviation for Threshold Voltage Using Parallel-Connected MOSFETs","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"1","path":["196"],"pubdate":{"attribute_name":"公開日","attribute_value":"2023-02-28"},"publish_date":"2023-02-28","publish_status":"0","recid":"1194","relation_version_is_last":true,"title":["並列接続MOSFETを用いたしきい値電圧標準偏差の測定評価"],"weko_creator_id":"1","weko_shared_id":1},"updated":"2023-07-25T10:35:59.017173+00:00"}